Showing 1–12 of 43 results
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- Excellent Surface Flatness: Atomically smooth surfaces after mechanical and chemical polishing
- Superior Purity: Available with purity grades ≥ 99.999% (5N) for high-precision applications
- Outstanding Thermal Conductivity: ~235 W/m·K at 300K
- High Ductility and Malleability: Ideal for deformation and recrystallization studies
- Stable Oxide Layer: Natural formation of a thin Al₂O₃ protective layer
- Corrosion Resistance: Suitable for atmospheric and mild chemical environments
- Customizable Size and Thickness: From small squares to large diameter disks
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- Ultra-High Thermal Conductivity: Up to 285 W/m·K, comparable to diamond.
- Wide Bandgap: ~6.2 eV, ideal for UV optoelectronic devices.
- High Electrical Resistivity: Excellent insulation properties.
- Superior Chemical and Thermal Stability: Suitable for harsh environments.
- Low Dielectric Constant and Loss: Enables high-frequency applications.
- High Mechanical Strength and Hardness: Durable under mechanical stress.
- Perfect Lattice Match for GaN: Supports high-quality epitaxial GaN growth.
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- Ultra-Wide Transmission Range (DUV to IR): 150 nm to 12–15 μm.
- Low Refractive Index: Minimizes reflection losses without extensive coatings.
- High Radiation Resistance: Suitable for high-radiation environments such as space and nuclear detectors.
- Low Dispersion: Excellent for optical systems requiring minimal chromatic aberration.
- Good Mechanical Properties: Higher fracture toughness compared to other fluoride crystals.
- Low Absorption and High Optical Quality: Especially critical in high-resolution spectroscopic systems.
- Compatibility with High-Energy Lasers: Due to high laser-induced damage threshold.
- Ease of Cleaving and Processing: Supports cost-effective manufacturing.
- Stable Physical and Chemical Properties: Good moisture resistance compared to other fluorides.
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- Ferroelectric behavior with spontaneous polarization
- Extremely high dielectric constant (up to thousands near Curie temperature)
- Piezoelectric and electro-optic effects
- Cubic structure at high temperature, tetragonal below Curie temperature (~120°C)
- Suitable for integration with other perovskite materials
- Atomically smooth surfaces achievable for epitaxy
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- Broad Transparency Window: 189 nm to 3500 nm, covering UV, visible, and near-IR
- Wide Phase-Matching Range: Supports multiple nonlinear optical processes
- High Damage Threshold: ~1 GW/cm² for 1064 nm, 10 ns pulses
- High Nonlinear Coefficients: Ensures efficient frequency conversion
- Low Birefringence Walk-Off: Enhances conversion efficiency
- Excellent Thermal and Mechanical Stability: Reliable under high-power laser operations
- Chemical Stability: Resistant to atmospheric moisture under normal use
- Customizable Phase Matching: Optimized for specific laser wavelengths and conversion processes
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- High Electro-optic and Photorefractive Properties: Suitable for real-time holography and optical data processing.
- Cubic Crystal Structure: Isotropic optical properties, facilitating easier device integration.
- High Photoconductivity: Enhances photorefractive response and device efficiency.
- Broad Transparency Range: From ~450 nm to 7000 nm.
- High Optical Damage Threshold: Suitable for high-intensity light exposure.
- Excellent Thermal and Chemical Stability: Reliable under varied operating conditions.
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- Direct Bandgap Semiconductor: Efficient absorption and emission of light; excellent for photovoltaic and photonic applications.
- High Optical Absorption: Especially in the visible spectrum.
- Strong Nonlinear Optical Effects: Useful for laser frequency conversion and optical modulation.
- Broad Transmission Range: From visible to near-infrared (0.7–3 μm).
- Low Defect Density: Ensures better carrier mobility and device performance.
- Good Chemical Stability: Under controlled conditions, suitable for device encapsulation.
- High Quantum Efficiency: Critical for optoelectronic device performance.
- High Dielectric Constant: Beneficial for high-frequency electronic applications.
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- Wide Direct Bandgap: ~2.42 eV at room temperature, ideal for visible light applications.
- High Optical Transparency: Strong transmission from UV to visible spectral range.
- Excellent Epitaxial Compatibility: Ideal lattice matching with other II-VI semiconductor materials.
- Good Electrical Properties: Suitable for device applications in photodetection and photovoltaic fields.
- High Crystallinity: Available with low defect densities and precise orientation control.
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- Wide Transmission Range (125 nm–10 μm): Ideal for deep UV, visible, and IR applications.
- Low Refractive Index: Reduces need for anti-reflective coatings.
- Minimal Birefringence: Suitable for precision optical systems.
- High Laser Damage Threshold: Critical for high-power laser optics.
- Excellent Chemical Inertness: Resistant to water, many acids, and most solvents.
- Thermal and Mechanical Stability: Supports use in demanding environments.
- Low Absorption in UV and IR: Maximizes optical throughput.
- Compatibility with Epitaxial Growth: Suitable for specialized semiconductor processes (e.g., GaN on CaF₂ substrates).
- Low Scattering and High Surface Quality: Essential for high-resolution optical systems.
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- High Electrical Conductivity: One of the highest among metals (~5.96×10⁷ S/m at 20°C)
- Excellent Thermal Conductivity: ~400 W/m·K
- Surface Smoothness: Atomically flat surfaces achievable after polishing
- Superior Purity Levels: Available in 99.999% (5N) or higher grades
- Stable Crystallographic Surface: Ideal for reproducible surface-sensitive experiments
- Low Surface Roughness: Ra < 5 Å achievable for polished samples
- Strong Corrosion Resistance: Protective native oxide layer forms naturally under ambient conditions
- Easily Customizable: Wide range of sizes, thicknesses, and orientations available
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- Efficient Eye-Safe Laser Emission: Strong laser output around 2.1 µm, ideal for safe medical and military applications.
- Self-Q-Switching Capability: Enabling compact laser designs without external modulators.
- High Optical Homogeneity: Ensures stable laser performance with minimal beam distortion.
- High Thermal Conductivity: Supports high-power laser operation with effective heat management.
- Long Fluorescence Lifetime: Enhances energy storage for pulsed laser systems.
- Excellent Mechanical and Chemical Stability: Resistant to environmental degradation.
- Direct Diode Pumping Compatibility: Allows for highly efficient, compact laser systems.
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- Strong and efficient emission at 2940 nm, ideal for water-rich tissue targeting
- Direct pumping at 980 nm or 1532 nm allows use of commercially available diode lasers
- High slope efficiency and low quantum defect, minimizing thermal load
- High thermal conductivity (~11 W/m·K) for superior heat dissipation
- Stable performance under high average and peak power operations
- High optical homogeneity and low absorption losses
- Durable mechanical properties, chemically stable in demanding environments
- Broad transparency range: 0.5 μm to 5.5 μm
