Showing 25–36 of 43 results
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- High efficiency lasing at 1064 nm
- Enhanced pump absorption under broadband light (flashlamp)
- Ce³⁺ doping improves resistance to UV-induced damage
- Low thermal lensing and high optical quality
- Supports high-energy Q-switched operation
- High chemical and mechanical stability
- Long fluorescence lifetime and excellent beam quality
- Transparent from 0.25 μm to 5.0 μm
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- Dual emission wavelengths: 1047 nm (σ polarization) and 1053 nm (π polarization)
- Naturally polarized output (birefringent crystal)
- Low thermal lensing and low quantum defect
- Longer fluorescence lifetime than Nd:YAG (~480 µs)
- Broad absorption bands suitable for diode pumping (e.g., 792 nm and 797 nm)
- High efficiency and excellent beam quality
- Suitable for high-energy pulsed and mode-locked operations
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- Excellent Thermal Stability: Maintains crystal integrity at high operating temperatures.
- Good Chemical Resistance: Resists degradation in acidic and basic environments.
- Low Lattice Mismatch: Ideal for the epitaxial growth of complex oxides and superconducting films.
- High Mechanical Strength: Reduces risk of cracking during processing and device operation.
- Superior Surface Quality: Supports high-quality thin film deposition.
- Perovskite-like Structure: Compatible with a broad range of oxide thin films.
- Stable Optical Properties: Suitable for use in optical communication and laser components.
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- Excellent Mechanical Strength: Suitable for high-stress applications
- Good Thermal Conductivity: Facilitates high-temperature processing
- Corrosion Resistance: Stable in oxidizing and reducing environments
- High Crystallinity: Supports high-quality epitaxial growth
- Magnetic Properties: Useful for spintronics and magnetic studies
- Surface Stability: Ideal for ultra-high vacuum (UHV) surface science experiments
- Customizable: Wide range of sizes, orientations, and surface finishes
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- Ultra-High Piezoelectric Coefficient (d₃₃ > 1500 pC/N): Enables extremely sensitive actuation and sensing.
- High Electromechanical Coupling Coefficient (k₃₃ > 0.9): Ensures efficient energy conversion.
- Large Strain (>0.1%): Suitable for actuators requiring high displacement.
- Low Dielectric Loss: Enhances energy efficiency and system stability.
- Superior Bandwidth and Sensitivity: Critical for medical ultrasound and SONAR transducers.
- Low Acoustic Impedance: Better matching with human tissues for biomedical applications.
- Customizable Crystal Composition (PMN-PT with various PT ratios): Tunable properties based on application requirements.
- Excellent Optical Quality (for thin PMN-PT films): Applicable in electro-optic modulators and photonic devices.
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- High Structural Perfection: Ideal lattice matching for growing oxide thin films such as superconductors and ferroelectric films.
- Excellent Dielectric Properties: High dielectric constant makes it suitable for tunable capacitors and microwave applications.
- Low Optical Absorption: Transparent in the visible to near-infrared spectrum, useful for optoelectronic devices.
- High Mechanical and Chemical Stability: Ensures robustness in diverse environments.
- Ferroelectric and Quantum Paraelectric Behavior: Suitable for research in quantum phase transitions and low-temperature physics.
- Epitaxial Growth Substrate: Preferred for epitaxy of functional oxide materials such as high-temperature superconductors, ferroelectric, and multiferroic materials.
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- Extreme surface hardness (Mohs 9, second only to diamond)
- Wide optical transmission from 150 nm (UV) to 5.5 μm (MWIR)
- High thermal conductivity and thermal shock resistance
- Excellent chemical inertness against acids and alkalis
- High dielectric strength and electrical insulation properties
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- Exceptional Photorefractive Effect: Superior for dynamic holography and real-time optical data storage.
- High Electro-optic Coefficient: Enabling efficient light modulation.
- Low Optical Damage Threshold: Excellent for high-sensitivity photorefractive applications.
- Piezoelectric and Pyroelectric Properties: Supporting applications in sensors and transducers.
- Nonlinear Optical Response: Suitable for second harmonic generation (SHG) and other nonlinear optical processes.
- Broad Transmission Range: Transparent from visible to near-infrared wavelengths.
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- Wide bandgap (3.2 eV for 4H-SiC)
- High thermal conductivity (~4.9 W/cm·K)
- Excellent chemical resistance
- High voltage breakdown strength
- Radiation hardness
- Suitable for GaN-on-SiC and epitaxial SiC device growth
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- Perfect cubic structure at room temperature
- High dielectric constant (~300 at room temperature)
- Low loss tangent
- Excellent lattice match with perovskite oxides (e.g., YBCO, LSMO, BST)
- High optical transparency in the visible and near-infrared range
- Atomically flat surfaces achievable after polishing
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- High Verdet Constant: ~-40 rad/T·m at 1064 nm, ~20–30% higher than TGG.
- Low Optical Absorption: Excellent for maintaining beam quality in high-power laser systems.
- Superior Thermal Conductivity: ~6.5 W/m·K at room temperature, reducing thermal lensing effects.
- Broad Transparency Range: 400 nm to 1600 nm, suitable for a wide range of laser wavelengths.
- High Damage Threshold: Withstands high optical and thermal loads.
- Stable Physical and Chemical Properties: High mechanical strength and chemical resistance.
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- Broad tunable laser output: 650–1100 nm
- Peak emission wavelength around 800 nm
- Wide absorption band: 400–600 nm (pumpable by 514–532 nm green lasers)
- Extremely broad gain bandwidth – ideal for femtosecond pulses
- High damage threshold and chemical stability
- Excellent thermal conductivity and optical quality
- Supports ultrashort pulse generation (<10 fs)
