Showing 1–12 of 17 results
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- Broad Transparency Window: 189 nm to 3500 nm, covering UV, visible, and near-IR
- Wide Phase-Matching Range: Supports multiple nonlinear optical processes
- High Damage Threshold: ~1 GW/cm² for 1064 nm, 10 ns pulses
- High Nonlinear Coefficients: Ensures efficient frequency conversion
- Low Birefringence Walk-Off: Enhances conversion efficiency
- Excellent Thermal and Mechanical Stability: Reliable under high-power laser operations
- Chemical Stability: Resistant to atmospheric moisture under normal use
- Customizable Phase Matching: Optimized for specific laser wavelengths and conversion processes
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- Wide Transmission Range (125 nm–10 μm): Ideal for deep UV, visible, and IR applications.
- Low Refractive Index: Reduces need for anti-reflective coatings.
- Minimal Birefringence: Suitable for precision optical systems.
- High Laser Damage Threshold: Critical for high-power laser optics.
- Excellent Chemical Inertness: Resistant to water, many acids, and most solvents.
- Thermal and Mechanical Stability: Supports use in demanding environments.
- Low Absorption in UV and IR: Maximizes optical throughput.
- Compatibility with Epitaxial Growth: Suitable for specialized semiconductor processes (e.g., GaN on CaF₂ substrates).
- Low Scattering and High Surface Quality: Essential for high-resolution optical systems.
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- Strong and efficient emission at 2940 nm, ideal for water-rich tissue targeting
- Direct pumping at 980 nm or 1532 nm allows use of commercially available diode lasers
- High slope efficiency and low quantum defect, minimizing thermal load
- High thermal conductivity (~11 W/m·K) for superior heat dissipation
- Stable performance under high average and peak power operations
- High optical homogeneity and low absorption losses
- Durable mechanical properties, chemically stable in demanding environments
- Broad transparency range: 0.5 μm to 5.5 μm
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- High Nonlinear Optical Coefficient: ~15 times that of KDP crystals.
- Broad Transparency Range: 350 nm to 4500 nm.
- High Damage Threshold: >500 MW/cm² for nanosecond pulses.
- Excellent Electro-optic Properties: Suitable for Q-switching and Pockels cells.
- Large Angular Acceptance and Low Walk-off Angle: Easier beam alignment and higher conversion efficiency.
- Stable Physical and Chemical Properties: High mechanical strength and environmental stability.
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- High Electro-optic Coefficient: Enables efficient light modulation
- Excellent Nonlinear Optical Properties: Ideal for frequency conversion processes
- Wide Transmission Range: Suitable for UV, visible, and infrared applications
- Strong Piezoelectric Response: Essential for SAW and MEMS devices
- Photorefractive Effect: Useful for holography and optical data storage
- Chemical and Thermal Stability: High reliability in demanding environments
- Availability of Stoichiometric and MgO-doped Variants: Reduces photorefractive damage and enhances performance in high-power lasers
- Precise Crystal Growth and Wafer Fabrication: Ensures high uniformity and low defect densities
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- Wide Transparency Range: 160 nm to 2600 nm
- Broad Phase-Matching Capability: Suitable for SHG, THG, OPO, SFG, DFG across UV to IR
- High Damage Threshold: >2 GW/cm² for 1064 nm, 10 ns pulse
- Low Walk-Off Angle: Ideal for high-beam-quality laser systems
- High Nonlinear Coefficients: Enables efficient frequency conversion
- Excellent Optical Homogeneity: Δn < 10⁻⁶/cm
- Good Mechanical Hardness: Mohs hardness ~6
- Stable Physical and Chemical Properties: Resistant to humidity and environmental degradation
- Nonhygroscopic: No special humidity control required
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- Excellent Lattice Matching: Ideal match for many perovskite oxides such as YBCO, BST, and PZT
- High Thermal Stability: Maintains structural integrity under high temperatures
- Low Dielectric Loss: Suitable for microwave and dielectric applications
- High Crystallinity: Enables defect-free epitaxial film growth
- Good Mechanical Strength: Durable for various thin-film deposition processes
- Smooth Surface Finish: Atomic-level flatness for epitaxial growth
- High Chemical Stability: Resists degradation during processing
- Wide Application Range: Compatible with superconducting, ferroelectric, and oxide-based systems
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- High efficiency lasing at 1064 nm
- Enhanced pump absorption under broadband light (flashlamp)
- Ce³⁺ doping improves resistance to UV-induced damage
- Low thermal lensing and high optical quality
- Supports high-energy Q-switched operation
- High chemical and mechanical stability
- Long fluorescence lifetime and excellent beam quality
- Transparent from 0.25 μm to 5.0 μm
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- Dual emission wavelengths: 1047 nm (σ polarization) and 1053 nm (π polarization)
- Naturally polarized output (birefringent crystal)
- Low thermal lensing and low quantum defect
- Longer fluorescence lifetime than Nd:YAG (~480 µs)
- Broad absorption bands suitable for diode pumping (e.g., 792 nm and 797 nm)
- High efficiency and excellent beam quality
- Suitable for high-energy pulsed and mode-locked operations
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- Exceptional Photorefractive Effect: Superior for dynamic holography and real-time optical data storage.
- High Electro-optic Coefficient: Enabling efficient light modulation.
- Low Optical Damage Threshold: Excellent for high-sensitivity photorefractive applications.
- Piezoelectric and Pyroelectric Properties: Supporting applications in sensors and transducers.
- Nonlinear Optical Response: Suitable for second harmonic generation (SHG) and other nonlinear optical processes.
- Broad Transmission Range: Transparent from visible to near-infrared wavelengths.
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- High Verdet Constant: ~-40 rad/T·m at 1064 nm, ~20–30% higher than TGG.
- Low Optical Absorption: Excellent for maintaining beam quality in high-power laser systems.
- Superior Thermal Conductivity: ~6.5 W/m·K at room temperature, reducing thermal lensing effects.
- Broad Transparency Range: 400 nm to 1600 nm, suitable for a wide range of laser wavelengths.
- High Damage Threshold: Withstands high optical and thermal loads.
- Stable Physical and Chemical Properties: High mechanical strength and chemical resistance.
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- Broad tunable laser output: 650–1100 nm
- Peak emission wavelength around 800 nm
- Wide absorption band: 400–600 nm (pumpable by 514–532 nm green lasers)
- Extremely broad gain bandwidth – ideal for femtosecond pulses
- High damage threshold and chemical stability
- Excellent thermal conductivity and optical quality
- Supports ultrashort pulse generation (<10 fs)
