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- Ferroelectric behavior with spontaneous polarization
- Extremely high dielectric constant (up to thousands near Curie temperature)
- Piezoelectric and electro-optic effects
- Cubic structure at high temperature, tetragonal below Curie temperature (~120°C)
- Suitable for integration with other perovskite materials
- Atomically smooth surfaces achievable for epitaxy
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- Excellent lattice matching for oxide thin films
- Wide transparency from UV to IR regions (0.3μm–6μm)
- High thermal conductivity and melting point (2852°C)
- Chemically inert to most acids and alkalis
- Low dielectric constant (ε ≈ 9.65 at 1MHz)
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- Diameter Choices: 2″ to 12″ (or custom sizes).
- Doping Concentration: Custom doping profiles for N-type and P-type wafers.
- Thickness Variability: From ultra-thin wafers to thick substrates.
- Crystal Orientation: Standard orientations include <100>, <111>, <110>, with custom orientations available.
- Flat & Edge Treatment: Rounded, chamfered, or custom edge profiles.
- Surface Finishing:
- SSP (Single-Side Polished) or DSP (Double-Side Polished).
- Oxide coating, etched surfaces, or epitaxial layers upon request.
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- Extreme surface hardness (Mohs 9, second only to diamond)
- Wide optical transmission from 150 nm (UV) to 5.5 μm (MWIR)
- High thermal conductivity and thermal shock resistance
- Excellent chemical inertness against acids and alkalis
- High dielectric strength and electrical insulation properties
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- Wide bandgap (3.2 eV for 4H-SiC)
- High thermal conductivity (~4.9 W/cm·K)
- Excellent chemical resistance
- High voltage breakdown strength
- Radiation hardness
- Suitable for GaN-on-SiC and epitaxial SiC device growth
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- Perfect cubic structure at room temperature
- High dielectric constant (~300 at room temperature)
- Low loss tangent
- Excellent lattice match with perovskite oxides (e.g., YBCO, LSMO, BST)
- High optical transparency in the visible and near-infrared range
- Atomically flat surfaces achievable after polishing
