Zinc Oxide (ZnO) Single Crystal Substrates

Description

Zinc Oxide (ZnO) single crystal substrates are wide-bandgap semiconductor materials known for their excellent optical, electrical, and piezoelectric properties. ZnO substrates provide an ideal lattice match for epitaxial growth of GaN, AlN, and other III-nitride or oxide-based thin films. With a direct bandgap of ~3.37 eV and high exciton binding energy (~60 meV), ZnO is widely used in optoelectronic devices such as LEDs, laser diodes, transparent conductive oxides, and UV photodetectors.

Our ZnO substrates are grown using hydrothermal or vapor-phase transport (VPT) methods, ensuring high crystalline quality, low dislocation density, and uniform surface morphology suitable for high-end epitaxial and device applications.

Key Features and Properties:

Wide Direct Bandgap: 3.37 eV at room temperature
High Exciton Binding Energy: ~60 meV, suitable for UV optoelectronics
Excellent Lattice Match: Compatible with GaN, AlN, and ZnMgO film growth
High Optical Transparency: From UV to near-IR regions
Strong Piezoelectric Effect: Ideal for SAW and bulk acoustic wave devices
Low Dislocation Density: <10⁴ cm⁻² (typical hydrothermal-grown crystal)
Thermal & Chemical Stability: Stable under high temperature and various process conditions
Multiple Orientations Available: (0001), (10-10), (11-20), etc.
Epi-Ready Polished Surfaces: Double-side polished (DSP) with ultra-flat surface

Typical Applications:

Epitaxial templates for GaN, AlN, ZnMgO, or InGaN thin films
UV LEDs and laser diodes
Transparent conductive oxide (TCO) layers
Surface acoustic wave (SAW) devices and bulk acoustic wave (BAW) resonators
UV and visible photodetectors
Piezoelectric and pyroelectric sensors
High-frequency acoustic devices
Thin-film transistors (TFTs) and oxide electronics

Material Properties and Crystal Structure:

Material	Zinc Oxide (ZnO)
Crystal Structure	Wurtzite (Hexagonal)
Space Group	P6₃mc
Lattice Constants	a = 3.249 Å, c = 5.206 Å
Density	5.606 g/cm³
Bandgap	3.37 eV (Direct)
Exciton Binding Energy	60 meV
Refractive Index (633 nm)	~2.0
Thermal Conductivity	0.6-1.2 W/cm·K
Thermal Expansion	αₐ = 4.75×10⁻⁶ K⁻¹, α𝑐 = 2.9×10⁻⁶ K⁻¹
Hardness (Mohs)	~4.5
Transparency Range	360 nm – 4500 nm
Typical Orientations	(0001), (10-10), (11-20)
Surface Finish	DSP (Double-Side Polished)
Orientation Accuracy	±0.5°
Surface Quality	10-5 or better (Scratch/Dig)
Standard Sizes	10×10 mm², 20×20 mm², 10×5×0.5 mm, 5×5×0.5 mm, Ø1”, Ø2”, customized
Applications	GaN/AlN epitaxy, SAW/BAW devices, UV detectors, piezoelectric sensors

Customization Options:

Orientation: (0001), (10-10), (11-20), (000-1)
Size: 5×5 mm² up to 2-inch diameter
Thickness: 0.3–2 mm
Surface Finish: SSP (single-side polished) or DSP (double-side polished)
Surface Quality: <10-5 Scratch-Dig (MIL-PRF-13830B standard)
Coatings: Optional AR or conductive coatings
Orientation Accuracy: ±0.5°
Epi-ready polishing and cleaning process available

Packaging and Delivery:

Cleanroom packaging with Class 100 standard
Moisture-proof, anti-static vacuum-sealed wrapping
Double protection against mechanical shock
Standard delivery time: 3–4 weeks (custom orders: 4–6 weeks)
Accompanied with quality inspection report including XRD, orientation, and surface roughness data

Why Choose Us:

Over a decade of crystal growth and wafer processing experience
Hydrothermal-grown ZnO crystals with superior crystalline perfection
Strict quality inspection: XRD rocking curve < 50 arcsec
ISO-certified polishing and surface preparation facilities
Reliable customization service for advanced optoelectronic research and production
Trusted by academic institutions and semiconductor manufacturers worldwide

Ordering & Contact Information:

We offer flexible MOQ (Minimum Order Quantity) and competitive pricing. Our substrates are packaged in Class 100 cleanroom environments and shipped worldwide. For custom orders or technical inquiries, please contact us for a detailed consultation!