Manganese Selenide (MnSe) Sputtering Target | Mn:Se = 1:1 at% | 99.9% Purity | Ø50.8mm

$895.00

  • High purity: 99.9% (3N) for consistent film composition
  • Precise alloy ratio (1:1 at%) for uniform deposition
  • Indium bonding + copper backing plate for efficient heat transfer
  • Compatible with magnetron sputtering systems
  • Supports stable deposition rates & low impurity levels
  • Customizable sizes, thicknesses, and atomic ratios available

Custom products or bulk orders, please contact us for competitive pricing!

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Description

Our Manganese Selenide (MnSe) Sputtering Target is manufactured with a precise Mn:Se = 1:1 atomic ratio and 99.9% purity for high-performance thin film deposition. The target features a 50.8mm diameter, 3mm thickness, and is indium bonded to a 3mm copper backing plate with a magnetic clamp to support stable sputtering performance and improved heat dissipation.

This MnSe target is ideal for R&D laboratories, semiconductor process development, optical coatings, photovoltaic devices, and specialty electronic applications.

Technical Specifications

Product Name Manganese Selenide (MnSe) Sputtering Target
Chemical Ratio Mn:Se = 1:1 at%
Purity 99.9% (3N)
Diameter 50.8mm (2 inch) or customized
Target Thickness 3mm or customized
Backing Plate 3mm Copper Backing Plate (Indium Bonded)
Mounting Option Magnetic Base / Magnetic Pad
Form Alloy Sputtering Target

 

Key Features

  • High purity: 99.9% (3N) for consistent film composition
  • Precise alloy ratio (1:1 at%) for uniform deposition
  • Indium bonding + copper backing plate for efficient heat transfer
  • Compatible with magnetron sputtering systems
  • Supports stable deposition rates & low impurity levels
  • Customizable sizes, thicknesses, and atomic ratios available

Applications

  • Semiconductor and microelectronic device fabrication
  • R&D thin film deposition and experimental materials development
  • IR optical coatings and photodetectors
  • Surface engineering / protective coatings
  • Photovoltaic energy materials & research
  • Compound semiconductor technologies

Customization Options

Purity 99.9% – 99.995%
Diameter 25.4mm / 50.8mm / 76.2mm / 101.6mm / Custom
Thickness 2mm – 10mm or custom
Backing Plate Cu / Mo / No backing plate
Bonding Method Indium / Diffusion / Non-bonded
  • Custom specifications are available. Contact us for pricing based on size and purity requirements.

Ordering & Technical Support

Tinsan Materials provides flexible minimum order quantities, competitive pricing, and worldwide delivery. For custom specifications or technical inquiries, please feel free to contact us for a detailed consultation or email us at info@nbsvip.com.

Additional information

Weight N/A
Purity

99.9%

Size

φ50.8mm x 3mm tk, bonded 3mm copper backing plate with magnetic pad attached