Silicon Sputtering Target 99.999% (5N) N-Type – Diameters 25.4 / 50 / 50.8 / 60 / 76.2 / 80 / 100 / 101.6 mm | Custom Sizes & Thickness Options

$46.00$200.00

  • Ultra-high purity 5N (99.999%) for superior thin-film quality and minimal contamination.
  • Stable electrical properties due to controlled N-type doping.
  • Excellent sputtering performance with uniform deposition and low particle generation.
  • Available in multiple diameters for different PVD systems.
  • Customizable in purity, doping type, diameter, thickness, and bonding options.

Custom products or bulk orders, please contact us for competitive pricing!

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Description

Our 99.999% (5N) N-Type Silicon Sputtering Targets are engineered for high-quality thin film deposition in semiconductor, photovoltaic, optical, and microelectronics applications.

We offer standard diameters 25.4 mm, 50mm, 50.8 mm, 60mm, 76.2 mm, 80mm, 100mm, and 101.6 mm, with thicknesses 3 mm, 4 mm, 5 mm, 6 mm, and 6.35mm (all listed thicknesses available with corresponding prices).

We also support full customization of purity, doping type, diameter, thickness, and shape, ensuring compatibility with a wide range of PVD sputtering systems and specialized R&D requirements.

Technical Specifications

Product Name N-Type Silicon Sputtering Target
Chemical Formula Si
Purity 99.999% (5N), customizable
Conductivity Type N-Type doped (phosphorus or arsenic available upon request)
Standard Diameters 25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80 mm, 100 mm, 101.6 mm (custom diameter available)
Standard Thicknesses 3 mm, 4 mm, 5 mm, 6 mm, 6.35 mm (custom thickness available)
Density 2.33 g/cm³
Shape Options Round target (rectangular and custom shapes available)
Packaging Vacuum-sealed, anti-static, moisture-proof packaging

 

Key Features

  • Ultra-high purity 5N (99.999%) for superior thin-film quality and minimal contamination.
  • Stable electrical properties due to controlled N-type doping.
  • Excellent sputtering performance with uniform deposition and low particle generation.
  • Available in multiple diameters for different PVD systems.
  • Customizable in purity, doping type, diameter, thickness, and bonding options.

Applications

  • Semiconductor device fabrication
  • Thin film transistors (TFT)
  • Photovoltaic and solar cell coatings
  • Optical and dielectric coating layers
  • MEMS, microelectronics, and nanotechnology research
  • R&D laboratories and academic materials research

Customization Options

We provide tailored silicon sputtering targets according to customer requirements:

  • Custom Purity Levels:
    • 4N (99.99%)
    • 4N5 (99.995%)
    • 5N (99.999%)
    • 6N (99.9999%)
  • Custom Diameters: From 10 mm to 300 mm, compatible with all major sputtering equipment.
  • Custom Thickness: Thickness available from 1 mm and above depending on substrate holders.
  • Doping Options:
    • N-Type: Phosphorus (P), Arsenic (As)
    • P-Type (upon request)
  • Special Shapes & Bonding:
    • Rectangular / square targets
    • Vacuum bonding to backing plates (Mo / Cu / SS)

Ordering & Technical Support

We provide flexible minimum order quantities, competitive pricing, and worldwide delivery. For custom specifications or technical inquiries, please feel free to contact us for a detailed consultation or email us at info@nbsvip.com.

Additional information

Weight N/A
PURITY

99.999% (N-Type)

DIAMETER

25.4mm, 50mm, 50.8mm, 60mm, 76.2mm, 80mm, 100mm, 101.6mm

THICKNESS

3mm, 4mm, 5mm, 6mm, 6.35mm