Silicon Sputtering Target 99.999% (5N) N-Type – Diameters 25.4 / 50 / 50.8 / 60 / 76.2 / 80 / 100 / 101.6 mm | Custom Sizes & Thickness Options
$46.00 – $200.00
- Ultra-high purity 5N (99.999%) for superior thin-film quality and minimal contamination.
- Stable electrical properties due to controlled N-type doping.
- Excellent sputtering performance with uniform deposition and low particle generation.
- Available in multiple diameters for different PVD systems.
- Customizable in purity, doping type, diameter, thickness, and bonding options.
Custom products or bulk orders, please contact us for competitive pricing!
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Description
Our 99.999% (5N) N-Type Silicon Sputtering Targets are engineered for high-quality thin film deposition in semiconductor, photovoltaic, optical, and microelectronics applications.
We offer standard diameters 25.4 mm, 50mm, 50.8 mm, 60mm, 76.2 mm, 80mm, 100mm, and 101.6 mm, with thicknesses 3 mm, 4 mm, 5 mm, 6 mm, and 6.35mm (all listed thicknesses available with corresponding prices).
We also support full customization of purity, doping type, diameter, thickness, and shape, ensuring compatibility with a wide range of PVD sputtering systems and specialized R&D requirements.
Technical Specifications
| Product Name | N-Type Silicon Sputtering Target |
| Chemical Formula | Si |
| Purity | 99.999% (5N), customizable |
| Conductivity Type | N-Type doped (phosphorus or arsenic available upon request) |
| Standard Diameters | 25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80 mm, 100 mm, 101.6 mm (custom diameter available) |
| Standard Thicknesses | 3 mm, 4 mm, 5 mm, 6 mm, 6.35 mm (custom thickness available) |
| Density | 2.33 g/cm³ |
| Shape Options | Round target (rectangular and custom shapes available) |
| Packaging | Vacuum-sealed, anti-static, moisture-proof packaging |
Key Features
- Ultra-high purity 5N (99.999%) for superior thin-film quality and minimal contamination.
- Stable electrical properties due to controlled N-type doping.
- Excellent sputtering performance with uniform deposition and low particle generation.
- Available in multiple diameters for different PVD systems.
- Customizable in purity, doping type, diameter, thickness, and bonding options.
Applications
- Semiconductor device fabrication
- Thin film transistors (TFT)
- Photovoltaic and solar cell coatings
- Optical and dielectric coating layers
- MEMS, microelectronics, and nanotechnology research
- R&D laboratories and academic materials research
Customization Options
We provide tailored silicon sputtering targets according to customer requirements:
- Custom Purity Levels:
- 4N (99.99%)
- 4N5 (99.995%)
- 5N (99.999%)
- 6N (99.9999%)
- Custom Diameters: From 10 mm to 300 mm, compatible with all major sputtering equipment.
- Custom Thickness: Thickness available from 1 mm and above depending on substrate holders.
- Doping Options:
- N-Type: Phosphorus (P), Arsenic (As)
- P-Type (upon request)
- Special Shapes & Bonding:
- Rectangular / square targets
-
Vacuum bonding to backing plates (Mo / Cu / SS)
Ordering & Technical Support
We provide flexible minimum order quantities, competitive pricing, and worldwide delivery. For custom specifications or technical inquiries, please feel free to contact us for a detailed consultation or email us at info@nbsvip.com.
Additional information
| Weight | N/A |
|---|---|
| PURITY | 99.999% (N-Type) |
| DIAMETER | 25.4mm, 50mm, 50.8mm, 60mm, 76.2mm, 80mm, 100mm, 101.6mm |
| THICKNESS | 3mm, 4mm, 5mm, 6mm, 6.35mm |








