Silicon Sputtering Target P-Type 99.999% (5N) – Diameters 25.4 / 50 / 50.8 / 60 / 76.2 / 80 / 100 / 101.6 mm | Custom Thickness & Size Options

$46.00$200.00

  • Ultra-high purity 5N Silicon ensures extremely low impurity levels and superior thin-film quality.
  • Stable p-type electrical conductivity ideal for semiconductor and solar applications.
  • Excellent sputtering uniformity with minimal particle generation.
  • Multiple standard diameters in stock for fast order fulfillment.
  • Fully customizable target dimensions, purity, and doping concentration.

Custom products or bulk orders, please contact us for competitive pricing!

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Description

Our 99.999% (5N) P-Type Silicon Sputtering Targets are manufactured for high-performance thin film deposition used in semiconductors, photovoltaic devices, microelectronics, and optical coatings.

We offer four standard diameters—25.4 mm, 50mm, 50.8 mm, 60mm, 76.2 mm, 80mm, 100mm, and 101.6 mm—with 3 mm, 4 mm, 5 mm, 6 mm, and 6.35mm thickness options (listed thicknesses will display corresponding prices).

Customized purity, diameter, doping concentration, thickness, and shapes are also available to meet specific R&D and production requirements.

Technical Specifications

Product Name P-Type Silicon Sputtering Target
Chemical Formula Si
Purity 99.999% (5N), custom options up to 6N
Conductivity Type P-Type (Boron-doped as default; other dopants available)
Standard Diameters 25.4 mm, 50 mm, 50.8 mm, 60 mm, 76.2 mm, 80 mm, 100 mm, 101.6 mm (custom diameter available)
Standard Thicknesses 3 mm, 4 mm, 5 mm, 6 mm, 6.35 mm (custom thickness available)
Density 2.33 g/cm³
Shape Options Round target (rectangular, square, and custom shapes available)
Packaging Vacuum-sealed, anti-static, moisture-proof, and shock-protected

 

Key Features

  • Ultra-high purity 5N Silicon ensures extremely low impurity levels and superior thin-film quality.
  • Stable p-type electrical conductivity ideal for semiconductor and solar applications.
  • Excellent sputtering uniformity with minimal particle generation.
  • Multiple standard diameters in stock for fast order fulfillment.
  • Fully customizable target dimensions, purity, and doping concentration.

Applications

  • Semiconductor device fabrication (p-type layers)
  • Thin-film deposition for ICs and microelectronics
  • Solar cell manufacturing (P-type silicon layers)
  • Optical coatings and dielectric layers
  • MEMS and sensor development
  • R&D laboratories and university research

Customization Options

We provide tailored silicon sputtering targets according to customer requirements:

  • Purity Customization:
    • 4N (99.99%)
    • 4N5 (99.995%)
    • 5N (99.999%)
    • 6N (99.9999%)
  • Diameter Customization
    • Standard: 25.4 / 50 / 50.8 / 60 / 76.2 / 80 / 100 / 101.6 mm
    • Available custom diameters: 10–300 mm
  • Thickness Customization
    • Standard: 3 / 4 / 5 / 6 / 6.35 mm
    • Custom thickness available upon request
  • Doping Customization
    • Boron (B) – standard p-type dopant
    • Aluminum (Al), Gallium (Ga), Indium (In) available on request
    • Tunable resistivity and dopant concentration
  • Shape & Bonding Options
    • Round, rectangular, square, or special shapes
    • Bonding to backing plates (Mo, Cu, SS) for high-power sputtering systems

Ordering & Technical Support

We provide flexible minimum order quantities, competitive pricing, and worldwide delivery. For custom specifications or technical inquiries, please feel free to contact us for a detailed consultation or email us at info@nbsvip.com.

Additional information

Weight N/A
PURITY

99.999% (P-Type)

DIAMETER

25.4mm, 50mm, 50.8mm, 60mm, 76.2mm, 80mm, 100mm, 101.6mm

THICKNESS

3mm, 4mm, 5mm, 6mm, 6.35mm